Generating and executing a control flow

ABSTRACT

Examples of the present disclosure provide apparatuses and methods related to generating and executing a control flow. An example apparatus can include a first device configured to generate control flow instructions, and a second device including an array of memory cells, an execution unit to execute the control flow instructions, and a controller configured to control an execution of the control flow instructions on data stored in the array.

PRIORITY INFORMATION

This application is a Continuation of U.S. application Ser. No.17/027,431, filed Sep. 21, 2020, which is a Continuation of U.S.application Ser. No. 16/112,577, filed Aug. 24, 2018, which issued asU.S. Pat. No. 10,782,980 on Sep. 22, 2020, which is a Continuation ofU.S. application Ser. No. 14/980,024, filed Dec. 28, 2015, which issuedas U.S. Pat. No. 10,061,590 on Aug. 28, 2018, which claims the benefitof U.S. Provisional Application No. 62/100,717, filed Jan. 7, 2015, thecontents of which are included by reference.

TECHNICAL FIELD

The present disclosure relates generally to semiconductor memoryapparatuses and methods, and more particularly, to apparatuses andmethods related to generating and executing a control flow.

BACKGROUND

Memory devices are typically provided as internal, semiconductor,integrated circuits in computers or other electronic systems. There aremany different types of memory including volatile and non-volatilememory. Volatile memory can require power to maintain its data (e.g.,host data, error data, etc.) and includes random access memory (RAM),dynamic random access memory (DRAM), static random access memory (SRAM),synchronous dynamic random access memory (SDRAM), and thyristor randomaccess memory (TRAM), among others. Non-volatile memory can providepersistent data by retaining stored data when not powered and caninclude NAND flash memory, NOR flash memory, and resistance variablememory such as phase change random access memory (PCRAM), resistiverandom access memory (RRAM), and magnetoresistive random access memory(MRAM), such as spin torque transfer random access memory (STT RAM),among others.

Electronic systems often include a number of processing resources (e.g.,one or more processors), which may retrieve and execute instructions(e.g., control flow) and store the results of the executed instructionsto a suitable location. A processor can comprise a number of functionalunits (e.g., herein referred to as functional unit circuitry) such asarithmetic logic unit (ALU) circuitry, floating point unit (FPU)circuitry, and/or a combinatorial logic block, for example, which canexecute instructions to perform logical operations such as AND, OR, NOT,NAND, NOR, and XOR logical operations on data (e.g., one or moreoperands).

A number of components in an electronic system may be involved inproviding instructions to the functional unit circuitry for execution.The instructions may be generated, for instance, by a processingresource such as a controller and/or host processor. Data (e.g., theoperands on which the instructions will be executed to perform thelogical operations) may be stored in a memory array that is accessibleby the functional unit circuitry. The instructions and/or data may beretrieved from the memory array and sequenced and/or buffered before thefunctional unit circuitry begins to execute instructions on the data.Furthermore, as different types of operations may be executed in one ormultiple clock cycles through the functional unit circuitry,intermediate results of the operations and/or data may also be sequencedand/or buffered.

In many instances, the processing resources (e.g., processor and/orassociated functional unit circuitry) may be external to the memoryarray, and data can be accessed (e.g., via a bus between the processingresources and the memory array) to execute instructions. Data can bemoved from the memory array to registers external to the memory arrayvia a bus.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block diagram of an apparatus in the form of a computingsystem in accordance with a number of embodiments of the presentdisclosure.

FIG. 2 is a block diagram of an apparatus in the form of a computingsystem in accordance with the prior art.

FIG. 3 is a block diagram of an apparatus in the form of a computingsystem in accordance with a number of embodiments of the presentdisclosure.

FIG. 4 is a block diagram of an apparatus in the form of a computingsystem in accordance with a number of embodiments of the presentdisclosure.

FIG. 5 is a block diagram of a control flow and the execution of thecontrol flow in accordance with a number of embodiments of the presentdisclosure.

FIG. 6 illustrates a schematic diagram of a portion of a memory array inaccordance with a number of embodiments of the present disclosure.

FIG. 7 is a schematic diagram illustrating sensing circuitry havingselectable logical operation selection logic in accordance with a numberof embodiments of the present disclosure.

FIG. 8 is a logic table illustrating selectable logic operation resultsimplemented by a sensing circuitry in accordance with a number ofembodiments of the present disclosure.

FIG. 9 illustrates a timing diagram associated with performing a logicaloperation and a shifting operation using sensing circuitry in accordancewith a number of embodiments of the present disclosure.

DETAILED DESCRIPTION

Examples of the present disclosure provide apparatuses and methodsrelated to generating and executing a control flow. An example apparatuscan include a first device configured to generate control flowinstructions, and a second device including an array of memory cells, anexecution unit to execute the control flow instructions, and acontroller configured to control an execution of the control flowinstructions on data stored in the array.

As used herein, a control flow refers to an order in which instructions(e.g., statements and/or function calls of a program) are executed. Theorder in which a number of instructions are executed can vary accordingto jumps, unconditional branches, conditional branches, loops, returns,and/or halts, among other instruction types associated with a program.In a number of examples, the number of instructions can also be functioncalls. An if-then statement is an example of a conditional branch. Thecondition evaluated in association with the if-then statement can beevaluated by a first device (e.g., a host processor) to generate acontrol flow. For example, a first set of instructions or a second setof instructions can be executed by a second device given the evaluationof a condition by the first device. The first device can furtherevaluate loops (e.g., for loops, while loops, etc.), for instance, togenerate a number of instructions that are executed by a second deviceand an order associated with the number of instructions.

In various previous approaches, the control flow is generated and theinstructions associated with the control flow are executed by a samedevice (e.g., a host processor). For example, the same device thatgenerates a number of instructions and an order of execution associatedwith the instructions also executes the number of instructions accordingto the generated order. Generating the control flow and executing theinstructions associated with the control flow in a same device caninclude generating the control flow before executing the instructions.For example, the control flow cannot be generated and the instructionsexecuted at the same time if a single device is generating the controlflow and executing the associated instructions.

In a number of examples according to the present disclosure, a firstdevice can generate the control flow and a second device can execute theinstructions corresponding to the control flow. For example, the controlflow can be generated concurrently with the execution of the controlflow. As used herein, instructions corresponding to a control flow,which may be referred to as “control flow instructions,” are meant torefer to instructions that involve manipulating data. For instance,instructions that involve manipulating data include instructionsinvolving performing computations on data, which can includemathematical operations (e.g., addition, subtraction, multiplication,and/or division), which can include performing various Boolean logicoperations such as AND, OR, invert, etc. Examples of instructions thatdo not involve manipulating data include memory commands such as dataread, data write, and data refresh operations.

As an example, the first device can be a host. A host can include one ofa central processing unit (CPU), a system on a chip (SoC), and anapplication specific integrated circuitry (ASIC), for instance. As anexample, a SoC can comprise one or more processors and one or morecontrollers (e.g., channel controllers) coupled to a number of memorydevices. A second device can be a memory device including a memoryarray, an execution unit, which can comprise sensing circuitry thatincludes a number of compute components, and a controller that controlsof the execution unit to execute the instructions. The controller of thememory device can operate the compute components of the execution unitto coordinate the execution of the instructions associated with thecontrol flow.

As an example, the instructions generated by a host can be executed byperforming a number of operations. For example, an “add” instructionincludes performing various logical operations. As used herein,instructions and operations are used interchangeably. Operations can becompare operations, swap operations, and/or logical operations (e.g.,AND operations, OR operations, SHIFT operations, INVERT operationsetc.). However, embodiments are not limited to these examples. As usedherein, executing Single Instruction Multiple Data (SIMD) operations isdefined as performing a same operation on multiple elements in parallel(e.g., simultaneously). As used herein, an element is a numerical valuethat can be stored (e.g., as a bit-vector) in a memory array.

In the following detailed description of the present disclosure,reference is made to the accompanying drawings that form a part hereof,and in which is shown by way of illustration how one or more embodimentsof the disclosure may be practiced. These embodiments are described insufficient detail to enable those of ordinary skill in the art topractice the embodiments of this disclosure, and it is to be understoodthat other embodiments may be utilized and that process, electrical,and/or structural changes may be made without departing from the scopeof the present disclosure. As used herein, the designators “J,” “N,”“R,” “S,” “U,” “V,” “W,” and “X” particularly with respect to referencenumerals in the drawings, indicates that a number of the particularfeature so designated can be included. As used herein, “a number of” aparticular thing can refer to one or more of such things (e.g., a numberof memory arrays can refer to one or more memory arrays).

The figures herein follow a numbering convention in which the firstdigit or digits correspond to the drawing figure number and theremaining digits identify an element or component in the drawing.Similar elements or components between different figures may beidentified by the use of similar digits. For example, 110 may referenceelement “10” in FIG. 1, and a similar element may be referenced as 210in FIG. 2. As will be appreciated, elements shown in the variousembodiments herein can be added, exchanged, and/or eliminated so as toprovide a number of additional embodiments of the present disclosure. Inaddition, as will be appreciated, the proportion and the relative scaleof the elements provided in the figures are intended to illustratecertain embodiments of the present invention, and should not be taken ina limiting sense.

FIG. 1 is a block diagram of an apparatus in the form of a computingsystem 100 in accordance with a number of embodiments of the presentdisclosure. As used herein, a host 110, a memory device 120, a memoryarray 130, and/or sensing circuitry 150 might also be separatelyconsidered an “apparatus” and/or a device.

System 100 includes a host 110 coupled to memory device 120, whichincludes a memory array 130. Host 110 can be a host system such as apersonal laptop computer, a desktop computer, a digital camera, a mobiletelephone, or a memory card reader, among various other types of hosts.Host 110 can include a system motherboard and/or backplane and caninclude a number of processing resources (e.g., one or more processors,microprocessors, or some other type of controlling circuitry) such as aCPU, SoC, ASIC, and/or memory buffer (e.g., registered dual in-linememory module (DIMM)). The system 100 can include separate integratedcircuits or both the host 110 and the memory device 120 can be on thesame integrated circuit. The system 100 can be, for instance, a serversystem and/or a high performance computing (HPC) system and/or a portionthereof. Although the example shown in FIG. 1 illustrates a systemhaving a Von Neumann architecture, embodiments of the present disclosurecan be implemented in non-von Neumann architectures (e.g., a Turingmachine), which may not include one or more components (e.g., CPU, ALU,etc.) often associated with a Von Neumann architecture.

For clarity, the system 100 has been simplified to focus on featureswith particular relevance to the present disclosure. The memory array130 can be a DRAM array, SRAM array, STT RAM array, PCRAM array, TRAMarray, RRAM array, NAND flash array, and/or NOR flash array, forinstance. The array 130 can comprise memory cells arranged in rowscoupled by access lines (which may be referred to herein as word linesor select lines) and columns coupled by sense lines (which may bereferred to herein as digit lines or data lines). Although a singlearray 130 is shown in FIG. 1, embodiments are not so limited. Forinstance, memory device 120 may include a number of arrays 130 (e.g., anumber of banks of DRAM cells). An example DRAM array is described inassociation with FIG. 6.

The memory device 120 includes address circuitry 142 to latch addresssignals provided over an I/O bus 156 (e.g., a data bus) through I/Ocircuitry 144. Address signals are received and decoded by a row decoder146 and a column decoder 152 to access the memory array 130. Data can beread from memory array 130 by sensing voltage and/or current changes onthe sense lines using sensing circuitry 150. The sensing circuitry 150can read and latch a page (e.g., row) of data from the memory array 130.The I/O circuitry 144 can be used for bi-directional data communicationwith host 110 over the I/O bus 156. The write circuitry 148 is used towrite data to the memory array 130.

Controller 140 decodes signals provided by control bus 154 from the host110. These signals can include chip enable signals, write enablesignals, and address latch signals that are used to control operationsperformed on the memory array 130, including data read, data write, anddata erase operations. In various embodiments, the controller 140 isresponsible for executing instructions from the host 110. The controller140 can be a state machine, a sequencer, or some other type ofcontroller.

As described further below, the controller 140 can comprise of multiplecontrollers (e.g., separate controller units). In a number ofembodiments, the sensing circuitry 150 can comprise a number of senseamplifiers and a number of compute components, which may comprise anaccumulator and can be used to perform logical operations (e.g., on dataassociated with complementary sense lines). In a number of embodiments,the sensing circuitry (e.g., 150) can be used to perform (e.g., execute)operations on data stored in array 130 and to store the results of thesort operation back to the array 130 without transferring data via asense line address access (e.g., without firing a column decode signal)and/or without enabling a local I/O line coupled to the sensingcircuitry. As such, operations can be performed using sensing circuitry150 rather than and/or in addition to being performed by processingresources external to the sensing circuitry 150 (e.g., by a processorassociated with host 110 and/or other processing circuitry, such as ALUcircuitry, located on device 120 (e.g., on controller 140 orelsewhere)). In a number of embodiments the sensing circuitry 150 can bereferred to as an execution unit. The execution unit may be coupled tothe memory array 130 and/or may be decoupled from the memory array 130.

As such, in a number of embodiments, registers and/or an ALU external toarray 130 and sensing circuitry 150 may not be needed to perform variousoperations as the sensing circuitry 150 can be controlled to perform theappropriate computations involved in performing operations using theaddress space of memory array 130. Additionally, operations can beperformed without the use of an external processing resource. Forinstance, an external processing resource such as host 110 may generatea control flow, but the host 110 (e.g., an ALU of the host) may not beused to perform computations associated with executing the instructionscorresponding to the control flow.

FIG. 2 is a block diagram of an apparatus in the form of a computingsystem 200 in accordance with the prior art. The system 200 includes ahost 210, a memory device 220-1, and a memory device 220-2. The host 210includes an ALU 260 and cache 262. Memory device 220-1 includes memoryarray 230.

As used herein, the host 210 is a first device and the memory device220-1 is a second device. Memory device 220-1 and/or memory device 220-2can be volatile memory and/or non-volatile memory. For example, memorydevice 220-1 can be a volatile memory (e.g., DRAM) and memory device220-2 can be non-volatile memory (e.g., a hard drive, solid state drive(SSD), etc.).

In a number of previous approaches, the host 210 can request data frommemory device 220-1. The memory device 220-1 can transfer the datastored in memory array 230 to the host 210. The memory device 220-1 canretrieve the data from memory device 220-2 (e.g., via a suitableinterface represented by arrow 272) if memory device 220-1 does not havethe requested data. The memory device 220-1 can store the data retrievedfrom memory device 220-2 in memory array 230. The data can be stored incache 262 by the host 210. The data can be, for example, a set ofexecutable instructions associated with performing a particular task(e.g., a program).

The ALU 260 can be used by the host 210 to identify the location of anumber of instructions that need to be executed from the data stored inthe cache 262. After each instruction is identified, by the ALU 260, thehost 210 can execute the identified instruction (as indicated by arrow268). For example, the host 210 can generate a control flow and canfurther execute the instructions associated with the control flow.

FIG. 3 is a block diagram of an apparatus in the form of a computingsystem 300 in accordance with a number of embodiments of the presentdisclosure. The system 300 includes a host 310, a memory device 320-1,and a memory device 320-2. In this example, the host 310 includes an ALU360 and cache 362, and the memory device 320-1 includes a controller340, memory array 330, and sensing circuitry 350.

The host 310 can be referred to as a first device and can comprise aCPU, SoC which may include a number of processors and a number ofchannel controllers (not shown), for example, and/or an ASIC, amongother types of devices. The host 310 can be used to generate a controlflow, which includes instructions and an execution order associated withthe instructions. In a number of examples, the host 310 can utilize theALU 360 to generate the control flow. Generating a control flow isfurther described in FIG. 5.

The host 310 can request data associated with a program from memorydevice 320-1. The memory device can retrieve the requested data frommemory array 330. The memory device can return the data to host 310. Thehost can store the data in cache 362 and utilize the ALU 360 to generatea control flow. In a number of examples, the data can be data associatedwith a set of executable instructions (e.g., a program). The program canbe represented in various formats. For example, the program can berepresented as a source file, an assembly file, an object file, and/oran executable file. In a number of examples, the program can begenerated dynamically. For example, the program can be provided viaassembly file and/or a buffer.

The data retrieved from memory array 330 can be used by host 310 togenerate a control flow. For example, the ALU 360 can be used toretrieve a number of instructions that represent operations. FIG. 5further describes the process of generating instructions.

In contrast to the example of FIG. 2, in which the control flowinstructions generated by host 210 are executed on the host 210 (e.g.,as indicated by arrow 268), in the example shown in FIG. 3, the host 310can provide the control flow instructions and an order of executionassociated with the instructions to the memory device 320-1 forexecution on the device 320-1 (e.g., via an execution unit local todevice 320-1). For example, although host 310 includes an ALU 360, whichmay be configured to execute control flow instructions generated by host310, in a number of embodiments, the execution of the control flowinstructions generated by host 310 occurs on a separate device (e.g.,memory device 320-1). As an example, the memory device 320-1 can receivethe control flow instructions from the host 310 at controller 340. Thecontroller 340 can receive the instructions via a buffer, a memoryarray, and/or shift circuitry of memory device 320-1, for instance.

The controller 340 can control execution of the control flowinstructions on data stored in memory cells in the memory array 330. Forexample, the controller 340 can control the execution of theinstructions by controlling the sensing circuitry 350, which may serveas an execution unit, to perform a number of operations associated withthe control flow instructions. In contrast, the memory device 220-1shown in FIG. 2 may have a controller (not shown); however, such acontroller would control execution of instructions other than commandflow instructions. For example, a controller on device 220-1 mightcontrol execution of memory command operations such as data read, datawrite, and data refresh operations, which do not involve manipulation ofdata associated with computations, but would not control execution ofcommand flow instructions.

Control flow instructions can include a number of operations includingAND operations, OR operations, INVERT operations, and/or SHIFToperations. The number of operations can include other operations. Forexample the operations can be any number of binary operations andnon-binary operations such as an addition operation, a multiplicationoperation, and/or a comparison operation. In a number of examples, thenumber of operations can be performed without transferring data via aninput/output (I/O) line 634 in FIG. 6.

The controller 340 can control a plurality of compute components (e.g.,compute components 631-0, 631-1, 631-2, 631-3, 631-4, 631-5, 631-6,631-7, . . . , 631-X in FIG. 6, referred to generally as computecomponents 631) coupled to a plurality of sense lines (e.g., sense lines605-0, 605-1, 605-2, 605-3, 605-4, 605-5, 605-6, 605-7, . . . , 605-S inFIG. 6, referred to generally as sense lines 605) and formed on pitchwith the plurality of memory cells (e.g., memory cells 603-0, 603-1,603-2, 603-3, 603-4, 603-5, 603-6, . . . , 603-J in FIG. 6, referred togenerally as memory cells 603) in array 330. The controller can alsocontrol a plurality of sense amplifiers (e.g., sense amplifiers 606-0,606-1, 606-2, 606-3, 606-4, 606-5, 606-6, 606-7, . . . , 606-U in FIG.6, referred to generally as sense amplifiers 606) coupled to theplurality of compute components 631. The controller 340 can control thecompute components 631 and the sense amplifiers 606 to execute theinstructions.

For example, the controller 340 can activate a number of sense lines 605and access lines (e.g., access lines 604-0, 606-1, 606-2, 606-3, 606-4,606-5, 606-6, . . . , 606-R in FIG. 6, referred to generally as accesslines 604) in array 330 to read the data in the array 330. The data canbe stored in the sense amplifiers 606 and/or the compute components 631.The controller 340 can further activate the sense lines 605, accesslines 604, and/or latches associated with the compute components 631and/or sense amplifiers 606 to execute a number of operations on thedata stored in the sense lines 605 and/or the compute components 631.

The controller 340 can also activate the sense lines 605 and/or theaccess lines 604 to store the results of the operations (e.g., theresults of the execution of the number of instructions) back to thearray 330. In a number of examples, the controller 340 can furthertransfer the results of the operations and/or an indication that theoperations have been executed back to host 310.

In a number of examples, the controller 340 can comprise a number ofcontrollers. For example, the controller 340 can comprise a firstcontroller and a number of second controllers. The first controller canreceive the number of instructions from the host 310. The instructionscan include instructions to perform, for example, an addition operation.The first controller can translate the number of instructions into anumber of AND operations, OR operations, INVERT operations, and/or SHIFToperations, for example. The first controller can provide the ANDoperations, OR operations, INVERT operations, and/or SHIFT operations tothe number of second controllers. The number of second controllers cancontrol the compute components 631 and the sense amplifiers 606 toexecute the AND operations, OR operations, INVERT operations, and/orSHIFT operations. For example, the number of second controllers canactivate the sense lines 605, access lines 604, and/or latchesassociated with the compute components 631 and/or sense amplifiers 606to execute the AND operations, OR operations, INVERT operations, and/orSHIFT operations. In a number of examples, each of the number of secondcontrollers can control the compute components 631 and/or the senseamplifiers 606 to execute at least one of the AND operations, ORoperations, INVERT operations, and/or SHIFT operations.

In accordance with a number of embodiments, a device on which a controlflow is generated (e.g., host 310) can be independent from a device onwhich the corresponding control flow instructions are executed (memorydevice 320-1). As an example, a control flow can be generated in anumber of portions. For instance, the host 310 can generate a controlflow that includes a first portion and a second portion, with the firstportion comprising a first number of control flow instructions and thesecond portion comprising a second number of control flow instructions.As an example, the host 310 can generate a first number of instructionsthat are associated with the first portion of the control flow andprovide them to the memory device 320-1. The host 310 can generate thesecond number of instructions that are associated with the secondportion of the control flow while the execution of the first number ofinstructions is occurring on the memory device 320-1 (e.g., thegeneration of the second portion of the control flow can occurconcurrently with execution of the first portion of the control flow).The memory device 320-1 can return a result of the execution of thefirst number of instructions to the host 310 and the host 310 canprovide the second number of instructions to the memory device 320-1.The memory device 320-1 can provide the result of the execution of thesecond number of instructions and/or an indication that the secondnumber of instructions have been executed to the host 310.

Separating the creation of the control flow from the execution of thecontrol flow provides the ability to execute the control flowconcurrently with the creation of the control flow. Furthermore,separating the creation of the control flow from the execution of thecontrol flow eliminates the need to move data to be operated on inassociation with the execution of the control flow to a host 310, sincethe control flow instructions are executed via an execution unit on adevice (e.g., 320-1) separate from the host 310.

FIG. 4 is a block diagram of an apparatus in the form of a computingsystem in accordance with a number of embodiments of the presentdisclosure. System 400 includes a host 410 that can be analogous to host310 in FIG. 3. FIG. 4 also includes memory devices 420-1, 420-2, . . . ,420-N (e.g., referred to generally as memory devices 420), which can beanalogous to memory device 320.

In this example, each of the memory devices 420 includes a controller, amemory array, and sense circuitry. For example, memory device 420-1includes controller 440-1, memory array 430-1, and sense circuitry450-1, memory device 420-2 includes controller 440-2, memory array430-2, and sense circuitry 450-2, and memory device 420-N includescontroller 440-N, memory array 430-N, and sense circuitry 450-N. Thecontroller 440-1, the controller 440-2, . . . , and the controller 440-Nare referred to generally as controllers 440. The array 430-1, the array430-2, . . . , and the array 430-N are referred to generally as arrays430. The sense circuitry 450-1, the sense circuitry 450-2, . . . , andthe sense circuitry 450-N are referred to generally as sense circuitry450. As described further below, in a number of embodiments, the sensecircuitry 450 can be operated (e.g., by a corresponding controller 440)to serve as an execution unit.

Host 410 can generate a number of different control flows. Each of thecontrol flows can be associated with a particular memory device 420. Forexample, a first control flow can be associated with memory device420-1, a second control flow can be associated with memory device 420-2,. . . , and an Nth control flow can be associated with memory device420-N. Arrows from host 410 to devices 420-1 to 420-N represent aninterface (e.g., bus) over which data, addresses, and/or commands can betransferred. However, the devices 420 may be coupled to the host 410 viaa common bus, for instance.

As an example, each of the different control flows can be associatedwith a single (e.g., same) program and/or the different control flowscan be associated with a different programs. For example, the first andsecond control flow can be associated with a first program and the Nthcontrol flow can be associated with a second (e.g., different) program.The first control flow can be associated with a first portion of thefirst program that is independent from a second portion of the firstprogram. The second control flow can be associated with a second portionof the first program that is independent from the first portion of thefirst program. A first portion of a program can be considered as beingindependent from a second portion of a program if executing a number ofinstructions associated with the first portion does not have an impacton the execution of a second number of instructions associated with thesecond portion of the program.

Each of the memory devices 420 can execute different instructions from aplurality of instructions associated with the plurality of controlflows. For example, the memory device 420-1 can execute a first numberof instructions associated with the first control flow, the memorydevice 420-2 can execute a second number of instructions associated withthe second control flow, . . . , and the memory device 420-N can executean Nth number of instructions associated with the Nth control flow.

In contrast to the example of FIG. 2, in which the creation of a controlflow and execution of the corresponding control flow instructions occuron the same device, embodiments of the present disclosure can involveseparating the creation of the control flows and the execution of thecontrol flows, which can allow a number of processes to be executedconcurrently. As used herein, a process refers to an instance of aprogram that is being executed. For example, a process can be executedconcurrently with the execution of a second program.

Concurrent execution of a number of processes can include a host 410generating control flows while the memory devices 420 are executing thecontrol flows. For example, host 410 can generate a first control flow.The host 410 can provide the first control flow to memory device 420-1.The host 410 can generate a second control flow while the memory device420-1 is executing a first number of instructions associated with thefirst control flow via the controller 440-1, the memory array 430-1, andthe sense circuitry 450-1. The host 410 can provide the second controlflow to memory device 420-2 while the memory device 420-1 is executingthe first number of instructions associated with the first control flow.The host 410 can generate and provide an Nth control flow to the memorydevice 420-N while the memory device 420-1 and the memory device 420-2are executing the first number of instructions associated with the firstcontrol flow and the second number of instructions associated with thesecond control flow, respectively. The memory device 420-2 can executethe second number of instructions via the controller 440-2, the memoryarray 430-2, and the sense circuitry 450-2. Each of the memory devices420 can execute a different plurality of instructions associated withdifferent control flows concurrently. For example, the memory device410-2 can execute the first number of instructions, the memory device410-2 can execute the second number of instructions, and the memorydevice 410-N can execute the Nth number of instructions concurrently.The memory device 410-N can execute the Nth number of instructions viathe controller 440-N, the memory array 430-N, and the sense circuitry450-N.

Each of the memory devices 420 can return a result of the execution ofthe different plurality of instructions and/or an indication that thedifferent plurality of instructions have been executed. For example, thememory device 420-1 can inform the host 410 that the first number ofinstructions have been executed while the second number of instructionsand the Nth number of instructions are being executed (e.g., on devices420-2 and 420-N, respectively). The host 410 can generate a differentcontrol flow that is associated with the first control flow based on theresult of the first number of instructions that are associated with thefirst control flow. The host 410 can provide the different control flowto the memory device 420-1 while the memory device 420-2 and the memorydevice 420-N are executing the second number of instructions and the Nthnumber of instructions, respectively. Each of the different controlflows can be generated serially. For example, the second control flowcan be generated after the first control flow is generated and the Nthcontrol flow can be generated after the first control flow and thesecond control flow are generated. Each of a different number ofinstructions associated with the different control flows can be executedconcurrently (e.g., at a same time). Each of the different number ofinstructions associated with the control flow can be executedconcurrently with the creation of the different control flows.

The example of FIG. 4 provides the ability to generate a number ofcontrol flows and execute a number of control flows concurrently byseparating the creation of the control flow from the execution of thecontrol flow. Executing a number of control flows concurrently canincrease productivity and can utilize a greater number of computationalresources concurrently as opposed to executing a single control flow ata time as provided in the example of FIG. 2. As an example, the ALU 460of host 410 can be configured to determine the manner in which controlflows are generated and/or distributed among the devices 420 forexecution.

FIG. 5 is a block diagram of a control flow and the execution of thecontrol flow in accordance with a number of embodiments of the presentdisclosure. FIG. 5 illustrates a system 500 that includes a device 510and a device 520. Generating a control flow can include fetching,decoding, and generating control flow instructions, which can includememory operable instructions. Executing the memory operable instructionsincludes receiving the memory operable instructions 586, operating anexecution unit (e.g., by activating access lines, sense lines, andlatches), and returning the result of the execution of the memoryoperable instructions.

In the example shown in FIG. 5, device 510 can be a host (e.g., host410) configured to generate control flows, and device 520 can be amemory device (e.g., device 420) configured to execute at least somecontrol flow instructions generated by the device 510. Fetching,decoding, and/or generating memory operable instructions can beclassified as host operable instructions. Host operable instructions areinstructions that a host (e.g., device 510) uses to create memoryoperable instructions. For example, the host operable instructions areinstructions that the host uses to create a number of operations thatare executed by device 520. Memory operable instructions are furtherdescribed below.

As described above the device 510 can be a host and the device 520 canbe a memory device. Host 510 can be associated with a program counter.The program counter holds the memory address of the next instruction tobe executed. The program counter can be incremented to get the addressof the next instructions.

At 580, the device 510 fetches an instruction from memory using theprogram counter. At the end of the fetch operation the program countercan point to the next instruction that will be read at the next cycle.The device 510 can store the fetched instruction in a cache. Cache canbe, for example, an instruction register and/or another form of memory.

At 582, the device 510 decodes the fetched instruction. Decoding thefetched instruction can include determining an operation to be performedbased on op-code associated with the fetched instruction. For example,the device 510 can decode an instruction (e.g., fetched instruction) todetermine that an addition operation is to be performed.

At 584, the device 510 generates memory operable instructions.Generating memory operable instructions can include dynamicallygenerating memory operable instructions. Dynamically generating memoryoperable instructions can be synonymous with dynamically generating acontrol flow because the memory operable instructions can be controlflow instructions that are associated with a control flow. The memoryoperable instructions can be dynamically generated when the device 510evaluates the decoded instructions to generate the memory operableinstructions. The device 510 can dynamically generate memory operableinstructions by evaluating a decoded instruction to generate the memoryoperable instructions. For example, a decoded instruction can be anif-then statement. The if-then statement can be dynamically evaluated bythe device 510. The device 510 can dynamically select a first memoryoperable instruction instead of a second memory operable instructionbased on the evaluation of the if-then statement. In a number ofexamples, the memory operable instructions can be dynamically generatedafter a program has been compiled.

As used herein, memory operable instructions refers to instructions thatare to be executed by the device 520. Memory operable instructions caninclude logical operations (e.g., AND operation, OR operations, etc.),addition operations, subtraction operations, multiplication operations,division operations, and/or comparison operations among other types ofoperations that can be associated with control flow instructions.Furthermore, memory operable instructions can include read operationsand/or write operations (e.g., memory commands that do not involvemanipulating data).

A plurality of memory operable instructions can be generated or a singlememory operable instruction can be generated by device 510. At 586, thedevice 520 can receive the memory operable instructions. The memoryoperable instructions can be received at a controller (e.g., controller340). At 588, the device 520 can activate access lines, sense lines,and/or latches to execute the memory operable instructions. For example,the controller can activate a number of access lines, sense lines,and/or latches associated with a memory array and/or sense circuitry indevice 520. Activating the number of access lines, sense lines, and/orlatches can move data from array in to the sensing circuitry.

The controller can further activate access lines, sense lines, and/orlatches in sense circuitry to execute the memory operable instructionson the data stored in the sensing circuitry. In a number of examples,the result of the execution of the memory operable instructions can bestored back to the array. At 590, the result of the memory operableinstructions can be returned to device 510.

In a number of examples, the device 510 and the device 520 at leastpartially decode the instructions. For example, the device 510 canpartially decode an instruction to generate a memory operableinstruction. The device 510 can provide the partially decoded memoryoperable instruction to the controller in device 520. The decoder canfurther decode the memory operable instruction and execute the fullydecoded memory operable instruction.

In a number of examples, the device 510 can retain partial control overthe memory operable instructions while the memory operable instructionsare executed on device 520. The device 510 can retain partial controlover the memory operable instructions by partially decoding the memoryoperable instructions. For example, the device 510 can partially decodememory operable instructions by translating a virtual address into aphysical memory address and device 520 can retrieve an instruction fromthe translated physical memory address. The device 510 can retainpartial control over the memory operable instructions by translating thevirtual address into the physical memory address.

FIG. 6 illustrates a schematic diagram of a portion of a memory array630 in accordance with a number of embodiments of the presentdisclosure. The array 630 includes memory cells 603-0, 603-1, 603-3,603-4, 603-5, 603-6, 603-7, 603-8, . . . , 603-J (e.g., referred togenerally as memory cells 603), coupled to rows of access lines 604-0,604-1, 604-2, 604-3, 604-4, 604-5, 604-6, . . . , 604-R and columns ofsense lines 605-0, 605-1, 605-2, 605-3, 605-4, 605-5, 605-6, 605-7, . .. , 605-S, which may be referred to generally as access lines 604 andsense lines 605. Memory array 630 is not limited to a particular numberof access lines and/or sense lines, and use of the terms “rows” and“columns” does not intend a particular physical structure and/ororientation of the access lines and/or sense lines. Although notpictured, each column of memory cells can be associated with acorresponding pair of complementary sense. The array 630 can be an arraysuch as array 330 in FIG. 3 or array 430 in FIG. 4, for example.

Each column of memory cells can be coupled to sensing circuitry (e.g.,sensing circuitry 150 shown in FIG. 1). In this example, the sensingcircuitry comprises a number of sense amplifiers 606-0, 606-1, 606-2,606-3, 606-4, 606-5, 606-6, 606-7, . . . , 606-U (e.g., referred togenerally as sense amplifiers 606) coupled to the respective sense lines605-0, 605-1, 605-2, 605-3, 605-4, 605-5, 605-6, 605-7, . . . , 605-S.The sense amplifiers 606 are coupled to input/output (I/O) line 634(e.g., a local I/O line) via access devices (e.g., transistors) 608-0,608-2, 608-3, 608-4, 608-5, 608-6, 608-7, . . . , 608-V. In thisexample, the sensing circuitry also comprises a number of computecomponents 631-0, 631-2, 631-3, 631-4, 631-5, 631-6, 631-7, . . . ,631-X (e.g., referred to generally as compute components 631) coupled tothe respective sense lines. Column decode lines 610-0 to 610-W arecoupled to the gates of transistors 608-0 to 608-V, respectively, andcan be selectively activated to transfer data sensed by respective senseamplifiers 606-0 to 606-U and/or stored in respective compute components631-0 to 631-X to a secondary sense amplifier 612 and/or to processingresources external to array 630 (e.g., via I/O line 634). In a number ofembodiments, the compute components 631 can be formed on pitch with thememory cells of their corresponding columns and/or with thecorresponding sense amplifiers 606.

The sensing circuitry (e.g., compute components 631 and sense amplifiers606) can be controlled by the controller (e.g., 140, 340, and 440) toexecute control flow operations in accordance with a number ofembodiments described herein. The example described in association withFIGS. 3 to 5, demonstrate how operations can be performed on data (e.g.,elements) stored in an array such as array 630.

FIG. 7 is a schematic diagram illustrating sensing circuitry havingselectable logical operation selection logic in accordance with a numberof embodiments of the present disclosure. FIG. 7 shows a number of senseamplifiers 706 coupled to respective pairs of complementary sense lines705-1 and 705-2, and a corresponding number of compute components 731coupled to the sense amplifiers 706 via pass gates 707-1 and 707-2. Thegates of the pass gates 707-1 and 707-2 can be controlled by a logicaloperation selection logic signal, PASS. For example, an output of thelogical operation selection logic 713-6 can be coupled to the gates ofthe pass gates 707-1 and 707-2.

According to the embodiment illustrated in FIG. 7, the computecomponents 731 can comprise respective stages (e.g., shift cells) of aloadable shift register configured to shift data values left and rightFor example, as illustrated in FIG. 7, each compute component 731 (e.g.,stage) of the shift register comprises a pair of right-shift transistors781 and 786, a pair of left-shift transistors 789 and 790, and a pair ofinverters 787 and 788. The signals PHASE 1R, PHASE 2R, PHASE 1L, andPHASE 2L can be applied to respective control lines 782, 783, 791 and792 to enable/disable feedback on the latches of the correspondingcompute components 831 in association with performing logical operationsand/or shifting data in accordance with embodiments described herein.Examples of shifting data (e.g., from a particular compute component 731to an adjacent compute component 731) is described further below withrespect to FIG. 9.

The logical operation selection logic 713-6 includes the swap gates 742,as well as logic to control the pass gates 707-1 and 707-2 and the swapgates 742. The logical operation selection logic 713-6 includes fourlogic selection transistors: logic selection transistor 762 coupledbetween the gates of the swap transistors 742 and a TF signal controlline, logic selection transistor 752 coupled between the gates of thepass gates 707-1 and 707-2 and a TT signal control line, logic selectiontransistor 754 coupled between the gates of the pass gates 707-1 and707-2 and a FT signal control line, and logic selection transistor 764coupled between the gates of the swap transistors 742 and a FF signalcontrol line. Gates of logic selection transistors 762 and 752 arecoupled to the true sense line through isolation transistor 750-1(having a gate coupled to an ISO signal control line). Gates of logicselection transistors 764 and 754 are coupled to the complementary senseline through isolation transistor 750-2 (also having a gate coupled toan ISO signal control line). FIG. 9 illustrate timing diagramsassociated with performing logical operations and shifting operationsusing the sensing circuitry shown in FIG. 7.

FIG. 8 is a logic table illustrating selectable logic operation resultsimplemented by a sensing circuitry (e.g., sensing circuitry shown inFIG. 7) in accordance with a number of embodiments of the presentdisclosure. The four logic selection control signals (e.g., TF, TT, FT,and FF), in conjunction with a particular data value present on thecomplementary sense lines, can be used to select one of a plurality oflogical operations to implement involving the starting data valuesstored in the sense amplifier 706 and compute component 731. The fourcontrol signals (e.g., TF, TT, FT, and FF), in conjunction with aparticular data value present on the complementary sense lines (e.g., onnodes S and S*), controls the pass gates 707-1 and 707-2 and swaptransistors 742, which in turn affects the data value in the computecomponent 731 and/or sense amplifier 706 before/after firing. Thecapability to selectably control the swap transistors 742 facilitatesimplementing logical operations involving inverse data values (e.g.,inverse operands and/or inverse result), among others.

Logic Table 8-1 illustrated in FIG. 8 shows the starting data valuestored in the compute component 731 shown in column A at 844, and thestarting data value stored in the sense amplifier 706 shown in column Bat 845. The other 3 column headings in Logic Table 8-1 refer to thestate of the pass gates 707-1 and 707-2 and the swap transistors 742,which can respectively be controlled to be OPEN or CLOSED depending onthe state of the four logic selection control signals (e.g., TF, TT, FT,and FF), in conjunction with a particular data value present on the pairof complementary sense lines 705-1 and 705-2 when the ISO control signalis asserted. The “NOT OPEN” column corresponds to the pass gates 707-1and 707-2 and the swap transistors 742 both being in a non-conductingcondition, the “OPEN TRUE” column corresponds to the pass gates 707-1and 707-2 being in a conducting condition, and the “OPEN INVERT” columncorresponds to the swap transistors 742 being in a conducting condition.The configuration corresponding to the pass gates 707-1 and 707-2 andthe swap transistors 742 both being in a conducting condition is notreflected in Logic Table 8-1 since this results in the sense lines beingshorted together.

Via selective control of the pass gates 707-1 and 707-2 and the swaptransistors 742, each of the three columns of the upper portion of LogicTable 8-1 can be combined with each of the three columns of the lowerportion of Logic Table 8-1 to provide nine (e.g., 3×3) different resultcombinations, corresponding to nine different logical operations, asindicated by the various connecting paths shown at 875. The ninedifferent selectable logical operations that can be implemented by thesensing circuitry 750 are summarized in Logic Table 8-2.

The columns of Logic Table 8-2 show a heading 880 that includes thestates of logic selection control signals (e.g., FF, FT, TF, TT). Forexample, the state of a first logic selection control signal (e.g., FF)is provided in row 876, the state of a second logic selection controlsignal (e.g., FT) is provided in row 877, the state of a third logicselection control signal (e.g., TF) is provided in row 878, and thestate of a fourth logic selection control signal (e.g., TT) is providedin row 879. The particular logical operation corresponding to theresults is summarized in row 847.

FIG. 9 illustrates a timing diagram associated with performing a logicalAND operation and a shifting operation using the sensing circuitry inaccordance with a number of embodiments of the present disclosure. FIG.9 includes waveforms corresponding to signals EQ, ROW X, ROW Y, SENSEAMP, TF, TT, FT, FF, PHASE 1R, PHASE 2R, PHASE 1L, PHASE 2L, ISO, Pass,Pass*, DIGIT, and DIGIT_. The EQ signal corresponds to an equilibratesignal (not shown) associated with a sense amplifier (e.g., senseamplifier 706). The ROW X and ROW Y signals correspond to signalsapplied to respective access line (e.g., access lines ROW 1 and ROW 2shown in FIG. 6) to access a selected cell (or row of cells). The SENSEAMP signal corresponds to a signal used to enable/disable a senseamplifier (e.g., sense amplifier 706). The TF, TT, FT, and FF signalscorrespond to logic selection control signals such as those shown inFIG. 7 (e.g., signals coupled to logic selection transistors 762, 752,754, and 764). The PHASE 1R, PHASE 2R, PHASE 1L, and PHASE 2L signalscorrespond to the control signals (e.g., clock signals) provided torespective control lines 782, 783, 791 and 792 shown in FIG. 7. The ISOsignal corresponds to the signal coupled to the gates of the isolationtransistors 750-1 and 750-2 shown in FIG. 7. The PASS signal correspondsto the signal coupled to the gates of pass transistors 707-1 and 707-2shown in FIG. 7, and the PASS* signal corresponds to the signal coupledto the gates of the swap transistors 742. The DIGIT and DIGIT_ signalscorrespond to the signals present on the respective sense lines 705-1(e.g., DIGIT (n)) and 705-2 (e.g., DIGIT (n)_).

The timing diagram shown in FIG. 9 is associated with performing alogical AND operation on a data value stored in a first memory cell anda data value stored in a second memory cell of an array. The memorycells can correspond to a particular column of an array (e.g., a columncomprising a complementary pair of sense lines) and can be coupled torespective access lines (e.g., ROW X and ROW Y). In describing thelogical AND operation shown in FIG. 9, reference will be made to thesensing circuitry described in FIG. 7. For example, the logicaloperation described in FIG. 9 can include storing the data value of theROW X memory cell (e.g., the “ROW X” data value) in the latch of thecorresponding compute component 731 (e.g., the “A” data value), whichcan be referred to as the accumulator 731, storing the data value of theROW Y memory cell (e.g., the “ROW Y” data value) in the latch of thecorresponding sense amplifier 706 (e.g., the “B” data value), andperforming a selected logical operation (e.g., a logical AND operationin this example) on the ROW X data value and the ROW Y data value, withthe result of the selected logical operation being stored in the latchof the compute component 731.

As shown in FIG. 9, at time T₁, equilibration of the sense amplifier 706is disabled (e.g., EQ goes low). At time T₂, ROW X goes high to access(e.g., select) the ROW X memory cell. At time T₃, the sense amplifier706 is enabled (e.g., SENSE AMP goes high), which drives thecomplementary sense lines 705-1 and 705-2 to the appropriate railvoltages (e.g., V_(DD) and GND) responsive to the ROW X data value(e.g., as shown by the DIGIT and DIGIT_signals), and the ROW X datavalue is latched in the sense amplifier 706. At time T₄, the PHASE 2Rand PHASE 2L signals go low, which disables feedback on the latch of thecompute component 731 (e.g., by turning off transistors 786 and 790,respectively) such that the value stored in the compute component may beoverwritten during the logical operation. Also, at time T₄, ISO goeslow, which disables isolation transistors 750-1 and 750-2. At time T₅,TT and FT are enabled (e.g., go high), which results in PASS going high(e.g., since either transistor 752 or 754 will conduct depending onwhich of node ST2 or node SF2 was high when ISO was disabled at time T₄(recall that when ISO is disabled, the voltages of the nodes ST2 and SF2reside dynamically on the gates of the respective enable transistors 752and 754). PASS going high enables the pass transistors 707-1 and 707-2such that the DIGIT and DIGIT_ signals, which correspond to the ROW Xdata value, are provided to the respective compute component nodes ST2and SF2. At time T₆, TT and FT are disabled, which results in PASS goinglow, which disables the pass transistors 707-1 and 707-2. It is notedthat PASS* remains low between time T₅ and T₆ since the TF and FFsignals remain low. At time T₇, ROW X is disabled, and PHASE 2R, PHASE2L, and ISO are enabled. Enabling PHASE 2R and PHASE 2L at time T₇enables feedback on the latch of the compute component 731 such that theROW X data value is latched therein. Enabling ISO at time T₇ againcouples nodes ST2 and SF2 to the gates of the enable transistors 752,754, 762, and 764. At time T₈, equilibration is enabled (e.g., EQ goeshigh such that DIGIT and DIGIT_are driven to an equilibrate voltage suchas V_(DD)/2) and the sense amplifier 706 is disabled (e.g., SENSE AMPgoes low).

With the ROW X data value latched in the compute component 731,equilibration is disabled (e.g., EQ goes low at time T₉). At time T₁₀,ROW Y goes high to access (e.g., select) the ROW Y memory cell. At timeT₁₁, the sense amplifier 706 is enabled (e.g., SENSE AMP goes high),which drives the complementary sense lines 705-1 and 705-2 to theappropriate rail voltages (e.g., V_(DD) and GND) responsive to the ROW Ydata value (e.g., as shown by the DIGIT and DIGIT_signals), and the ROWY data value is latched in the sense amplifier 706. At time T₁₂, thePHASE 2R and PHASE 2L signals go low, which disables feedback on thelatch of the compute component 731 (e.g., by turning off transistors 786and 790, respectively) such that the value stored in the computecomponent may be overwritten during the logical operation. Also, at timeT₁₂, ISO goes low, which disables isolation transistors 750-1 and 750-2.Since the desired logical operation in this example is an AND operation,at time T₁₃, TT is enabled while TF, FT and FF remain disabled (as shownin TABLE 8-2, FF=0, FT=0, TF=0, and TT=1 corresponds to a logical ANDoperation). Whether enabling TT results in PASS going high depends onthe value stored in the compute component 731 when ISO is disabled attime T₁₂. For example, enable transistor 752 will conduct if node ST2was high when ISO is disabled, and enable transistor will not conduct ifnode ST2 was low when ISO was disabled at time T₁₂.

In this example, if PASS goes high at time T₁₃, the pass transistors707-1 and 707-2 are enabled such that the DIGIT and DIGIT_ signals,which correspond to the ROW Y data value, are provided to the respectivecompute component nodes ST2 and SF2. As such, the value stored in thecompute component 731 (e.g., the “ROW X” data value) may be flipped,depending on the value of DIGIT and DIGIT_ (e.g., the ‘ROW Y″ datavalue). In this example, if PASS stays low at time T₁₃, the passtransistors 707-1 and 707-2 are not enabled such that the DIGIT andDIGIT_ signals, which correspond to the ROW Y data value, remainisolated from the nodes ST2 and SF2 of the compute component 731. Assuch, the data value in the compute component (e.g., the ROW X datavalue) would remain the same.

At time T₁₄, TT is disabled, which results in PASS going (or remaining)low, such that the pass transistors 707-1 and 707-2 are disabled. It isnoted that PASS* remains low between time T₁₃ and T₁₄ since the TF andFF signals remain low. At time T₁₅, ROW Y is disabled, and PHASE 2R,PHASE 2L, and ISO are enabled. Enabling PHASE 2R and PHASE 2L at timeT₁₅ enables feedback on the latch of the compute component 731 such thatthe result of the AND operation (e.g., “A” AND “B”) is latched therein.Enabling ISO at time T₁₅ again couples nodes ST2 and SF2 to the gates ofthe enable transistors 752, 754, 762, and 764. At time T₁₆,equilibration is enabled (e.g., EQ goes high such that DIGIT and DIGIT_are driven to an equilibrate voltage) and the sense amplifier 706 isdisabled (e.g., SENSE AMP goes low).

The result of the AND operation, which is initially stored in thecompute component 731 in this example, can be transferred back to thememory array (e.g., to a memory cell coupled to ROW X, ROW Y, and/or adifferent row via the complementary sense lines) and/or to an externallocation (e.g., an external processing component) via I/O lines.

FIG. 9 also includes (e.g., at 901) signaling associated with shiftingdata (e.g., from a compute component 731 to an adjacent computecomponent 731). The example shown in FIG. 9 illustrates two left shiftssuch that a data value stored in a compute component corresponding tocolumn “N” is shifted left to a compute component corresponding tocolumn “N−2”. As shown at time T₁₆, PHASE 2R and PHASE 2L are disabled,which disables feedback on the compute component latches, as describedabove. To perform a first left shift, PHASE 1L is enabled at time T₁₇and disabled at time T₁₈. Enabling PHASE 1L causes transistor 789 toconduct, which causes the data value at node SF1 to move left to nodeSF2 of a left-adjacent compute component 731. PHASE 2L is subsequentlyenabled at time T₁₉ and disabled at time T₂₀. Enabling PHASE 2L causestransistor 790 to conduct, which causes the data value from node ST1 tomove left to node ST2 completing a left shift.

The above sequence (e.g., enabling/disabling PHASE 1L and subsequentlyenabling/disabling PHASE 2L) can be repeated to achieve a desired numberof left shifts. For instance, in this example, a second left shift isperformed by enabling PHASE 1L at time T₂₁ and disabling PHASE 1L attime T₂₂. PHASE 2L is subsequently enabled at time T₂₃ to complete thesecond left shift. Subsequent to the second left shift, PHASE 2L remainsenabled and PHASE 2R is enabled (e.g., at time T₂₄) such that feedbackis enabled to latch the data values in the compute component latches.

Although specific embodiments have been illustrated and describedherein, those of ordinary skill in the art will appreciate that anarrangement calculated to achieve the same results can be substitutedfor the specific embodiments shown. This disclosure is intended to coveradaptations or variations of one or more embodiments of the presentdisclosure. It is to be understood that the above description has beenmade in an illustrative fashion, and not a restrictive one. Combinationof the above embodiments, and other embodiments not specificallydescribed herein will be apparent to those of skill in the art uponreviewing the above description. The scope of the one or moreembodiments of the present disclosure includes other applications inwhich the above structures and methods are used. Therefore, the scope ofone or more embodiments of the present disclosure should be determinedwith reference to the appended claims, along with the full range ofequivalents to which such claims are entitled.

In the foregoing Detailed Description, some features are groupedtogether in a single embodiment for the purpose of streamlining thedisclosure. This method of disclosure is not to be interpreted asreflecting an intention that the disclosed embodiments of the presentdisclosure have to use more features than are expressly recited in eachclaim. Rather, as the following claims reflect, inventive subject matterlies in less than all features of a single disclosed embodiment. Thus,the following claims are hereby incorporated into the DetailedDescription, with each claim standing on its own as a separateembodiment.

What is claimed is:
 1. An apparatus comprising: a host configured togenerate a plurality of control flows corresponding to a same program;and a plurality of memory devices, each of the plurality of memorydevices including: a memory array; sensing circuitry; and a controllerconfigured to operate the sensing circuitry to execute control flowinstructions corresponding to the plurality of control flows on datastored in the memory array.
 2. The apparatus of claim 1, wherein each ofthe respective plurality of memory devices is configured to executecontrol flow instructions corresponding to a different one of theplurality of control flows.
 3. The apparatus of claim 1, wherein each ofthe plurality of control flows is generated serially.
 4. The apparatusof claim 1, wherein the plurality of memory devices are configured toconcurrently execute control flow instructions corresponding todifferent portions of at least one of the plurality of control flows. 5.The apparatus of claim 1, wherein the controller of each of therespective plurality of memory devices is configured to receive controlflow instructions from the host.
 6. The apparatus of claim 1, wherein:the sensing circuitry of each of the respective plurality of memorydevices comprises a plurality of sense amplifiers and a plurality ofcompute components; the plurality of compute components comprisetransistors formed on pitch with memory cells of the respective memoryarray; and the sensing circuitry is operated by the respectivecontroller to execute the control flow instructions, wherein executingthe control flow instructions includes performing at least one logicaloperation without transferring data via an input/output line of thememory array.
 7. The apparatus of claim 6, wherein the at least onelogical operation is selected from the group including: an ANDoperation; an operation; or an invert operation.
 8. An apparatuscomprising: a plurality of memory devices; a host configured to generatea plurality of control flows corresponding to a same program and whereineach of the plurality of control flows is associated with a differentone of the plurality of memory devices; and wherein each of theplurality of memory devices includes: a memory array; sensing circuitry;and a controller configured to operate the sensing circuitry to executecontrol flow instructions corresponding to the plurality of controlflows on data stored in the memory array.
 9. The apparatus of claim 8,wherein each of the plurality of control flows is associated with adifferent portion of the same program.
 10. The apparatus of claim 8,wherein the each of a plurality of portions of the same program areindependent from each other.
 11. The apparatus of claim 10, wherein eachof the plurality of memory devices is further configured to execute thecontrol flow instructions without having an impact on an execution ofdifferent control flow instructions by other memory devices from theplurality of memory devices.
 12. The apparatus of claim 8, wherein thehost is further configured to generate a second control flow from theplurality of control flows while a first controller from a plurality ofcontrollers corresponding to the plurality of memory devices executes afirst control flow from the plurality of control flows.
 13. Theapparatus of claim 12, wherein the host is further configured to providethe second control flow to a second controller from the plurality ofcontrollers while the first controller executes the first control flow.14. The apparatus of claim 13, wherein the host is further configured togenerate and provide a third control flow to a third controller whilethe second controller executes the second control flow and the firstcontroller execute the first control flow.
 15. The apparatus of claim14, wherein the third controller is configured to execute the thirdcontrol flow concurrently with an execution of the first control flow bythe first controller and an execution of the second control flow by thesecond controller.
 16. The apparatus of claim 14, wherein the firstcontroller is further configured to provide a result of an execution ofthe first control flow to the host while the second controller executesthe second control flow and the third controller executes the thirdcontrol flow.
 17. The apparatus of claim 16, wherein the host is furtherconfigured to, responsive to receiving the result: generate a fourthcontrol flow while the second controller executes the second controlflow and the third controller execute the third control flow; andprovide the fourth control flow to the first controller.
 18. Anapparatus comprising: a host configured to generate a plurality ofcontrol flows, wherein each of the plurality of control flowscorresponds to a different program; and a plurality of memory devices,each of the plurality of memory devices including: a memory array;sensing circuitry; and a controller configured to operate the sensingcircuitry to concurrently execute control flow instructionscorresponding to the plurality of control flows on data stored in thememory array.
 19. The apparatus of claim 18, wherein the host comprisesan ALU that is configured to determine a manner in which the pluralityof control flows are generated.
 20. The apparatus of claim 19, whereinthe ALU is further configured to determine a manner in which theplurality of control flows is distributed among a plurality ofcontrollers including the controller.